Physics · Semiconductor Devices
एक MOSFET में तापीय रूप से विकसित सिलिकॉन डाइऑक्साइड परत के लिए, गेट और चैनल के बीच रिसाव धारा (leakage current) सैद्धांतिक रूप से शून्य होती है और व्यावहारिक रूप से मानी जाती है:
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