Physics · Semiconductor Devices
Identify the correct statement associated with an NPN BJT transistor.
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1In the forward-active mode, electrons from the emitter are injected across the B-E junction into the base, creating an excess minority carrier concentration in the base.✓
- 2In the forward-active mode, holes from the emitter are injected across the B-E junction into the base, creating an excess minority carrier concentration in the base.
- 3In the cut-off mode, holes from the emitter are injected across the B-E junction into the base, creating an excess minority carrier concentration in the base.
- 4In the cut-off mode, the device gives maximum conduction due to excess minority carrier concentration in the base.
Correct answer
In the forward-active mode, electrons from the emitter are injected across the B-E junction into the base, creating an excess minority carrier concentration in the base.
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