Physics · Semiconductor Devices
Which statement is false about the built-in potential of a P-N junction diode?
- 1Built-in potential is also known as barrier potential or contact potential difference.
- 2Built-in potential for Silicon is approximately 0.7 V and for Germanium is 0.3 V.
- 3P-N junction permits significant forward current flow even below the built-in potential.✓
- 4Built-in potential depends upon the material used, doping concentration, and temperature.
Correct answer
P-N junction permits significant forward current flow even below the built-in potential.
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