Physics · Semiconductor Devices
Which of the following statements is correct regarding semiconductor energy bands?
- 1In an N-type semiconductor, the donor energy level is formed due to the trivalent dopant and it lies just below the valence band.
- 2In a P-type semiconductor, the donor energy level is formed due to the pentavalent dopant and it lies just below the conduction band.
- 3In an N-type semiconductor, the acceptor energy level is formed due to the pentavalent dopant and it lies just above the conduction band.
- 4In a P-type semiconductor, the acceptor energy level is formed due to the trivalent dopant and it lies just above the valence band.✓
Correct answer
In a P-type semiconductor, the acceptor energy level is formed due to the trivalent dopant and it lies just above the valence band.
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