Physics · Semiconductors
Which of the following options is INCORRECT for an N-channel enhancement MOSFET?
- 1A conducting channel is formed when a positive VGS is applied
- 2If the doping of the p-type substrate decreases, the threshold voltage decreases
- 3There is no pre-existing channel
- 4If the gate oxide layer thickness increases significantly, the gate capacitance increases✓
Correct answer
If the gate oxide layer thickness increases significantly, the gate capacitance increases
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