Physics · Semiconductor Devices
Avalanche breakdown in a reverse-biased p-n junction diode is primarily caused by which of the following phenomena?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1Low barrier potential height
- 2Thermal generation alone
- 3Impact ionization due to high-velocity carriers✓
- 4Direct field emission of electrons
Correct answer
Impact ionization due to high-velocity carriers
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