Physics · Semiconductor Devices
एक फोटोडायोड 1.42 eV के बैंडगैप वाले सेमीकंडक्टर से बना है। यह देखते हुए कि प्लैंक नियतांक 6.626 × 10-34 Js है, निर्वात में प्रकाश की गति 3 × 108 m/s है, और 1 eV = 1.6 × 10-19 J है, फोटोडायोड की कट-ऑफ तरंगदैर्घ्य (नैनोमीटर में) लगभग कितनी है?
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