Physics · Semiconductor Devices
Which of the following statements regarding Metal Oxide Semiconductor (MOS) devices is NOT correct?
- 1MOS gates require less space on the silicon wafer
- 2MOS gates dissipate less power per gate under static conditions
- 3MOS devices are the fastest among all semiconductor devices✓
- 4MOS devices require fewer manufacturing steps compared to BJT
Correct answer
MOS devices are the fastest among all semiconductor devices
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