Physics · Semiconductor Electronics
Which of the following statements is INCORRECT regarding the built-in potential (barrier potential) of a p-n junction diode?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1Built-in potential depends on the semiconductor material, doping concentration, and temperature.
- 2A p-n junction allows significant conduction current under forward bias even below its built-in potential.✓
- 3At room temperature, the barrier potential is approximately 0.7 V for Silicon and 0.3 V for Germanium.
- 4Built-in potential is also known as barrier potential or contact potential difference.
Correct answer
A p-n junction allows significant conduction current under forward bias even below its built-in potential.
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