Physics · Semiconductor Devices

What is the typical source/drain region doping concentration value used for the numerical analysis and simulation of a short-channel SOI MESFET?

Verified Solution4 OptionsUpdated: October 2026👁️1 View

11025 cm-3
21015 cm-3
31020 cm-3✓
41010 cm-3

Correct answer

1020 cm-3

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