Physics · Semiconductor Electronics
What is the primary cause of the built-in potential at a p-n junction?
- 1Difference in electron affinity between p-type and n-type materials
- 2Difference in bandgap energy between p-type and n-type materials
- 3Drift of minority carriers across the junction under the influence of an external electric field
- 4Diffusion of majority carriers across the junction, leaving behind immobile ionized donors and acceptors✓
Correct answer
Diffusion of majority carriers across the junction, leaving behind immobile ionized donors and acceptors
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