Teaching semiconductor electronics includes explaining energy bands, doping techniques, and p-n junction behavior. During a practical session, students observe that increasing the forward-bias voltage beyond the knee voltage does not lead to an infinite, uninhibited rise in current but is limited by the bulk resistance of the semiconductor. Based on the concept of carriers and device structure, which of the following statements best explains this limitation?

Question

Physics · Pedagogy of Physics

Verified Solution4 OptionsUpdated: October 2026👁️1 View

Share:

Correct answer

At high forward bias, the current is limited by the bulk resistance of the p and n regions rather than the junction depletion barrier

Save this question and verified answer as a clean study sheet with live clickable link.

👥

Challenge your peer aspirants on WhatsApp or Telegram to solve this question!

Online Test Series

Practice full-length mock tests with real exam timers, instant score analysis, and all-India ranking.

Chapter Practice

Want more practice questions on Pedagogy of Physics?

Solve complete topic-wise tests with detailed solutions on GkGet.

Recommended practice questions in Physics · Pedagogy of Physics

The Dandi March, also known as the Salt Satyagraha, was led by which influential leader?

Which act formally granted independence to India, marking the end of British rule?

Who was the key figure in establishing the Indian National Congress?

Answer 1

The energy bands collapse entirely, invalidating the basic p-n junction charge model

Answer 2

Forward bias does not affect charge carrier movement, making current completely independent of applied voltage

Answer 3

Students are misreading the meter; the ideal diode model always shows an infinite linear current increase without resistance

Answer 4

At high forward bias, the current is limited by the bulk resistance of the p and n regions rather than the junction depletion barrier

Related Practice Questions