Physics · Semiconductor Electronics
Silicon (at 300 K) has a hole concentration (and equal electron concentration) of 1.5 × 1016 m-3. After indium is doped, the new hole concentration becomes 4.5 × 1022 m-3. The value of electron concentration in the doped silicon is:
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 15.0 × 109 m-3✓
- 24.5 × 1022 m-3
- 33.0 × 106 m-3
- 41.5 × 1016 m-3
Correct answer
5.0 × 109 m-3
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