Science and Technology · Electronics and Semiconductors
Scientists from which of the following institutes developed a highly reliable High Electron Mobility Transistor (HEMT) using GaN technology?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1IIT Madras
- 2IISc Bangalore✓
- 3DRDO
- 4IIT Delhi
Correct answer
IISc Bangalore
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