Physics · Semiconductor Fabrication
Regarding the validity and standard conditions of the Deal-Grove model for silicon oxidation, which of the following assumptions or parameters is incorrect?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1It is valid for a temperature range of 700°C to 1200°C.
- 2It is valid for oxidant partial pressures in the range of 0.1 to 1 atm.
- 3The crystal orientation of silicon must be exclusively .✓
- 4It applies to both dry and wet thermal oxidation mechanisms.
Correct answer
The crystal orientation of silicon must be exclusively .
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