Physics · Semiconductor Electronics
Pure Si at 300 K has equal electron (ne) and hole (nh) concentrations of 1.5 × 1016 m-3. Doping by indium increases nh to 3 × 1022 m-3. Calculate ne in the doped Si.
- 17.5 × 1019 m-3
- 21.5 × 1016 m-3
- 33.0 × 1022 m-3
- 47.5 × 109 m-3✓
Correct answer
7.5 × 109 m-3
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