Electronics Engineering · IC Fabrication
In the fabrication of a semiconductor device using the Dual-well or Twin-tub Process, the initial step involves forming a thin layer of SiO2 on the substrate. What is the primary purpose of this initial thin SiO2 layer?
- 1It serves as a sacrifice CVD sacrificial oxide layer for chemical mechanical planarization.
- 2It serves as a linear isolation oxide between adjacent wells.
- 3It serves directly as the final thin gate oxide for the MOS transistors.
- 4It serves as a pad oxide to reduce stress during subsequent silicon nitride deposition.✓
Correct answer
It serves as a pad oxide to reduce stress during subsequent silicon nitride deposition.
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