Electronics Engineering · IC Fabrication
In the Dual-well Process or Twin-tub Process of CMOS fabrication, during the step dedicated to gate material formation and subsequent doping, what is typically created?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
Share:
- 1The p+ polysilicon gate for NMOS and n+ polysilicon gate for PMOS exclusively.
- 2Nitride spacers are formed on the sidewalls of PMOS transistors only.
- 3The n+ polysilicon gate for NMOS and p+ polysilicon gate for PMOS (or dual-doped gates).✓
- 4A thin layer of field oxide is grown over the active region.
Correct answer
The n+ polysilicon gate for NMOS and p+ polysilicon gate for PMOS (or dual-doped gates).
Download Single Question PDF
Save this question and verified answer as a clean study sheet with live clickable link.
👥
Share with Friends & Study Groups
Challenge your peer aspirants on WhatsApp or Telegram to solve this question!
Online Test Series
Start Free Mock Test →Preparing for Electronics Engineering?
Practice full-length mock tests with real exam timers, instant score analysis, and all-India ranking.
Chapter Practice
Practice IC Fabrication MCQs →Want more practice questions on IC Fabrication?
Solve complete topic-wise tests with detailed solutions on GkGet.
Related Practice Questions
Recommended practice questions in Electronics Engineering · IC Fabrication