Physics · Semiconductor Devices

In the Deal-Grove silicon oxidation model, if B A is the linear rate constant and τ accounts for the shift in the time coordinate to represent the presence of an initial oxide layer, then the linear growth regime is represented as:

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B A (t + τ)

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In the Deal-Grove silicon oxidation model, if B A is the linear rate constant and &tau; accounts for the shift in the time coordinate to represent the presence of an initial oxide layer, then the linear growth regime is represented as: