Physics · Semiconductor Devices
In an n-channel MOS device having a p-type silicon substrate, gate oxide thickness of 10 nm, depletion charge Qd = -3.32 × 10-8 C/cm2, flat band voltage VFB = -0.561 V, and surface potential under strong inversion φs = 0.658 V, what is the device threshold voltage VT? (Given permittivity of oxide εox = 3.45 × 10-13 F/cm)
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 11.2 V
- 20.18 V✓
- 30.56 V
- 40.78 V
Correct answer
0.18 V
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