Physics · Power Semiconductor Devices
In a standard four-layer p-n-p-n Silicon Controlled Rectifier (SCR) structure, the gate terminal is physically fabricated on which layer?
- 1The p-layer adjacent to the anode terminal
- 2The inner p-layer located near the cathode terminal✓
- 3The inner n-layer in between the anode and cathode outer layers
- 4The outer n-layer forming the anode terminal
Correct answer
The inner p-layer located near the cathode terminal
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