Physics · Semiconductor Physics

In a non-degenerate bulk semiconductor with an electron density n = 10 16 cm -3 , the value of E C - E Fn = 200 meV, where E C and E Fn denote the bottom of the conduction band energy and the electron Fermi level energy, respectively. Assume the thermal voltage is 26 meV and the intrinsic carrier concentration is 10 10 cm -3 . For n = 0.5 × 10 16 cm -3 , the closest approximation of the value of (E C − E Fn ) is: