Physics · Semiconductor Devices
In a Junction Field-Effect Transistor (JFET), the drain current IDS in the saturation region can be approximated as:
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1IDS = IDSS × (1 - VGS / V_P)2✓
- 2IDS = IDSS × (1 - VGS / V_P)1/2
- 3IDS = IDSS × (1 - VGS / V_P)
- 4IDS = (IDSS / V_P) × (1 - VGS / 2)
Correct answer
IDS = IDSS × (1 - VGS / V_P)2
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