Physics · Semiconductor Electronics
In a forward-biased bipolar junction transistor, the emitter-base depletion layer is narrower than the collector-base depletion layer. This can be attributed to:
- 1heavier doping in both the emitter and collector regions
- 2lighter doping in both the emitter and collector regions
- 3heavier doping in the collector region and lighter doping in the emitter region
- 4heavier doping in the emitter region and lighter doping in the collector region✓
Correct answer
heavier doping in the emitter region and lighter doping in the collector region
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