Physics · Power Electronics
If a Gate Turn-Off Thyristor (GTO) is operated in a DC chopper circuit without a protective snubber circuit, device failure during the turn-off phase will primarily result from:
- 1Symmetric avalanche breakdown of the reverse gate-cathode junction
- 2High di/dt stresses generated during the initial turn-on period
- 3Four-layer latch-up due to strong internal regenerative feedback
- 4Localized hot-spot formation caused by current tailing effects under high voltage voltage stress✓
Correct answer
Localized hot-spot formation caused by current tailing effects under high voltage voltage stress
Download Single Question PDF
Save this question and verified answer as a clean study sheet with live clickable link.
Share with Friends & Study Groups
Challenge your peer aspirants on WhatsApp or Telegram to solve this question!
Preparing for Physics?
Practice full-length mock tests with real exam timers, instant score analysis, and all-India ranking.
Want more practice questions on Power Electronics?
Solve complete topic-wise tests with detailed solutions on GkGet.
Related Practice Questions
Recommended practice questions in Physics · Power Electronics