Electronics Engineering · IC Fabrication
For fabricating an integrated circuit (IC), which oxidation method should be chosen to achieve a faster oxidation rate for creating thick silicon dioxide (SiO2) layers exceeding 1 μm, while accepting a higher density of interface states?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1Plasma-enhanced oxidation
- 2Slow oxidation
- 3Dry oxidation
- 4Wet oxidation✓
Correct answer
Wet oxidation
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