Electronics Engineering · VLSI Design
Consider the following statements regarding the MOS circuit design process: 1. MOS circuits are formed on four basic layers: n-diffusion, p-diffusion, polysilicon, and metal, which are isolated from one another by thick or thin silicon dioxide insulating layers. 2. Thin oxide (thinox) mask region includes n-diffusion, p-diffusion, and transistor channels. 3. Polysilicon and thinox regions interact so that a transistor is formed where they cross one another. Which of the above statements are correct?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 11, 2 and 3
- 22 and 3 only✓
- 31 and 3 only
- 41 and 2 only
Correct answer
2 and 3 only
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