Physics · Semiconductors
Consider a situation in which the reverse biased current of a particular P-N junction increases when it is exposed to light of wavelength < 621 nm. During this process, enhancement in carrier concentration takes place due to the generation of hole-electron pairs. The value of the band gap is closest to which of the following?
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 12 eV✓
- 24 eV
- 31 eV
- 40.5 eV
Correct answer
2 eV
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