Physics · Semiconductor Devices
Consider a long rectangular bar of a direct bandgap p-type semiconductor. The equilibrium hole density is 10 17 cm -3 and the intrinsic carrier concentration is 10 10 cm -3 . Electron and hole diffusion lengths are 2 μm and 1 μm, respectively. The left side of the bar (x = 0) is uniformly illuminated with a laser having photon energy greater than the bandgap of the semiconductor, generating excess electron-hole pairs ONLY at x = 0. If the steady-state electron density at x = 0 is 10 14 cm -3 due to laser illumination, then under these conditions (ignoring the electric field), the closest approximation of the steady-state electron density at x = 2 μm is:
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 10.37 × 10 14 cm -3✓
- 20.63 × 10 13 cm -3
- 33.7 × 10 14 cm -3
- 410 3 cm -3
Correct answer
0.37 × 10 14 cm -3
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