Electrical Engineering · Power Semiconductor Devices
Assertion (A): An IGBT combines the advantages of BJTs and MOSFETs. Reason (R): An IGBT has high input impedance like MOSFETs and low on-state conduction losses like BJTs.
Verified Solution4 OptionsUpdated: October 2026👁️1 View
Share:
- 1A is true but R is false.
- 2A is false but R is true.
- 3Both A and R are true, and R is the correct explanation of A.✓
- 4Both A and R are true, and R is not the correct explanation of A.
Correct answer
Both A and R are true, and R is the correct explanation of A.
Download Single Question PDF
Save this question and verified answer as a clean study sheet with live clickable link.
👥
Share with Friends & Study Groups
Challenge your peer aspirants on WhatsApp or Telegram to solve this question!
Online Test Series
Start Free Mock Test →Preparing for Electrical Engineering?
Practice full-length mock tests with real exam timers, instant score analysis, and all-India ranking.
Chapter Practice
Practice Power Semiconductor Devices MCQs →Want more practice questions on Power Semiconductor Devices?
Solve complete topic-wise tests with detailed solutions on GkGet.
Related Practice Questions
Recommended practice questions in Electrical Engineering · Power Semiconductor Devices