Computer · VLSI Design
Arrange the following process steps in the correct sequence for self-aligned gate formation in MOS fabrication: A. Thermal oxidation to grow gate oxide B. Polysilicon deposition C. Photolithography using gate mask D. Etching of polysilicon and oxide E. Source/drain diffusion or ion implantation Choose the correct answer from the options given below:
Verified Solution4 OptionsUpdated: October 2026👁️1 View
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- 1E, A, B, C, D
- 2A, B, C, D, E✓
- 3E, B, A, C, D
- 4A, B, D, C, E
Correct answer
A, B, C, D, E
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