Electronics Engineering · Power Semiconductor Devices
An Insulated Gate Bipolar Transistor (IGBT) possesses which of the following key characteristics?
- 1High input impedance✓
- 2Extremely high on-state conduction voltage drop compared to a standard MOSFET
- 3Severe second breakdown problems
- 4Low input impedance
Correct answer
High input impedance
Download Single Question PDF
Save this question and verified answer as a clean study sheet with live clickable link.
Share with Friends & Study Groups
Challenge your peer aspirants on WhatsApp or Telegram to solve this question!
Preparing for Electronics Engineering?
Practice full-length Electronics Engineering mock tests with real exam timers, instant score analysis, and all-India ranking.
Want more practice questions on Power Semiconductor Devices?
Solve complete topic-wise tests with detailed solutions on GkGet.
Related Practice Questions
Recommended practice questions in Electronics Engineering · Power Semiconductor Devices