Mathematics · Semiconductor Physics Calculations
A PN junction is formed using P-type and N-type semiconductors with doping concentrations: NA = 1012/cm3, ND = 1010/cm3. Given: Thermal voltage: VT = 25 mV Intrinsic carrier concentration: ni = 106/cm3 What is the built-in voltage V0 across the PN junction?
- 1250 ln(100) mV
- 2500 ln(10) mV
- 3250 ln(10) mV✓
- 4125 ln(10) mV
Correct answer
250 ln(10) mV
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