A germanium crystal is doped at room temperature with a minute quantity of trivalent boron. The majority and minority charge carriers in this doped semiconductor will be, respectively:

Two statements are given below: Statement A: When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases significantly. Statement B: This current is called reverse saturation current. Choose the correct answer:

When an electric field is applied across a semiconductor, which of the following statements is correct?