Mathematics · Semiconductor Physics
The resistivity of a uniformly doped n-type silicon sample is 0.50 Ω-cm. If the electron mobility (μn) is 1250 cm2/V-sec and the charge of an electron is 1.6 × 10-19 coulomb, the donor impurity concentration (N_D) in the sample is
Verified Solution4 OptionsUpdated: October 2026👁️1 View
Share:
- 12 × 1015 / cm3
- 22.5 × 1015 / cm3
- 31 × 1016 / cm3✓
- 42 × 1016 / cm3
Correct answer
1 × 1016 / cm3
Download Single Question PDF
Save this question and verified answer as a clean study sheet with live clickable link.
👥
Share with Friends & Study Groups
Challenge your peer aspirants on WhatsApp or Telegram to solve this question!
Online Test Series
Start Free Mock Test →Preparing for Mathematics?
Practice full-length mock tests with real exam timers, instant score analysis, and all-India ranking.
Chapter Practice
Practice Semiconductor Physics MCQs →Want more practice questions on Semiconductor Physics?
Solve complete topic-wise tests with detailed solutions on GkGet.
Related Practice Questions
Recommended practice questions in Mathematics · Semiconductor Physics