Physics · Electronics

Consider an ideal long-channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µn) and oxide capacitance per unit area (COX) is µnCOX = 1 mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS = [2 - sin(2t)] V and drain-to-source voltage VDS = 1 V (with substrate connected to the source), the maximum value of the drain-to-source current is: